Parametric Design and Reliability Analysis of WIT Wafer Level Packaging

Y. T. Lin, P. Tang, K. Chiang
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Abstract

The demands of electronic packages toward lower profile, lighter weight, and higher density of I/O lead to rapid expansion in the field of flip chip, chip scale package (CSP) and wafer level packaging (WLP) technologies. The urgent needs of high I/O density and good reliability characteristic lead to the evolution of the ultra high-density type of non-solder interconnection such as the wire interconnect technology (WIT). The new technology using copper posts to replace the solder bumps as interconnections shown a great improvement in the reliability life. Moreover, this type of wafer level package could achieve higher I/O density, as well as ultra fine pitch. This research will focus on the reliability analysis of the WIT package structures in material selection and structural design, etc. This research will use finite element method to analyze the physical behavior of packaging structures under thermal cycling condition to compare the reliability characteristics of conventional wafer level package and WIT packages. Parametric studies of specific parameters will be performed, and the plastic and temperature dependent material properties will be applied to all of the models.
WIT晶圆级封装参数化设计与可靠性分析
电子封装对更低的外形、更轻的重量和更高的I/O密度的需求导致倒装芯片、芯片级封装(CSP)和晶圆级封装(WLP)技术领域的快速扩张。对高I/O密度和高可靠性特性的迫切需求导致了超高密度非焊料互连的发展,如线互连技术(WIT)。采用铜柱代替凸点作为互连的新技术,大大提高了可靠性寿命。此外,这种晶圆级封装可以实现更高的I/O密度,以及超细间距。本研究将着重从材料选择、结构设计等方面对WIT封装结构进行可靠性分析。本研究将采用有限元方法分析热循环条件下封装结构的物理行为,比较传统晶圆级封装与WIT封装的可靠性特性。将进行具体参数的参数化研究,并将塑料和温度相关的材料特性应用于所有模型。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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