InGaAs MOSFET source structures toward high speed/low power applications

Abstract

High on-currents (Ion) and low off-currents (I_off) under low supply voltage are important for logic applications. A heavily doped InP source was introduced to demonstrate the existence of high Ion in InGaAs MOSFETs, and I_D = 2.4 mA/μm at V_D = 0.5 V was observed. GaAsSb source was introduced in InGaAs tunnel FET to realize low I_off. Narrow channel body was found to be essential for steep sub-threshold (SS) dependence, and a fabricated GaAsSb/InGaAs vertical tunnel FET with a 26 nm wide body showed steep SS. In addition, an InGaAs/InP super-lattice source was studied to consider the possibility of simultaneous high I_on and low I_off realization.