Metrology standards for advanced semiconductor lithography referenced to atomic spacings and geometry

E. Teague, L. W. Linholm, M. Cresswell, W. B. Penzes, J. Kramar, F. Scire, J. Villarrubia, J. Jun
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引用次数: 3

Abstract

It is shown how the needs for calibrating the positional accuracy of features of an X-ray mask membrane or an optical reticle can be addressed by application of a high-accuracy coordinate metrology system known as the Molecular Measuring Machine (M-Cubed). Based on scanning tunneling microscopy and state-of-the-art heterodyne optical interferometry, the measurements of M-Cubed are referenced to fundamental standards of length and angle and with the atomic-resolution of its scanning tunneling microscope probe are validated against the interatomic spacings and geometry of single crystal surfaces. Through the use of a stable reference grid, serving as an intermediate calibration artifact, the positional accuracy of features on an X-ray mask membrane or an optical reticle can be referenced to fundamental standards of length and angle by means of the metrology system of M-Cubed.<>
参考原子间距和几何的先进半导体光刻的计量标准
本文展示了如何通过应用称为分子测量机(m - cube)的高精度坐标计量系统来校准x射线掩膜或光学光栅特征的位置精度。基于扫描隧道显微镜和最先进的外差光学干涉测量,m - cube的测量参考了长度和角度的基本标准,并利用扫描隧道显微镜探针的原子分辨率对单晶表面的原子间间距和几何形状进行了验证。通过使用稳定的参考网格作为中间校正伪影,x射线掩膜或光学光栅上的特征位置精度可以通过m - cube计量系统参考长度和角度的基本标准。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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