Projecting oxide lifetime by a step voltage method using electric field correction (MOS VLSI)

Abstract

The validity of a projection method of time dependent dielectric breakdown (TDDB) lifetime from step voltage tests is investigated. The conventional projection method is found to be unable to project correct lifetime in the intrinsic failure mode. This is caused by a decreased electric field of gate oxide due to the resistance of the gate electrode. A correction method of the electric field based on Fowler-Nordheim current transport is proposed. It yields excellent agreement between projected and measured TDDB lifetimes in all failure modes.<>