MOSFET-array for extracting parameters expressing SPICE-parameter variation

K. Terada, Naoya Ekida, K. Tsuji, T. Tsunomura, A. Nishida
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引用次数: 1

Abstract

Parameters in Pelgrom's model, which express SPICE-model parameter variations, are evaluated using MOSFET array which has 16K DUTs and is made using 65-nm technology. It is found that the parameters expressing the random component of the variation are dominant, and that the parameters expressing the systematic component are mainly determined by the gate-insulator thickness.
用于提取香料参数变化的mosfet阵列
Pelgrom模型中的参数表示spice模型参数的变化,使用16K dut的MOSFET阵列进行评估,该阵列采用65纳米技术制造。结果表明,表示随机分量的参数占主导地位,表示系统分量的参数主要由栅极绝缘子厚度决定。
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