Influence of Surface Cleaning on Stressvoiding and Electromigration of Cu Damascene Interconnection

Abstract

This paper is to study the influence of Cu surface clean process on stressvoiding and electromigration of Cu dual damascene metallization. A superior Cu pre-cleaning process condition is developed to improve Cu stress-induced voiding (SIV) and electromigration (EM). Higher pre-clean bias-power and shorter pre-clean time demonstrate remarkable low via resistance and excellent Cu reliability performance.