High-performance bottom-gate poly-Si/SiN TFTs on glass-substrate

Abstract

Bottom-gate poly-Si/SiN TFTs have been presented with extremely high electron mobility of more than 300 cm/sup 2//Vs on a glass-substrate, for the first time. These TFTs can be produced by the standard process for the bottom-gate a-Si/SiN TFTs with only two additional excimer-laser annealings, that is, the laser pre-annealing of the SiN gate and the dual-beam annealing of an active thin silicon layer.<>