A dynamic depletion SOI MOSFET model for SPICE

Abstract

We show, using measurements, that a transition between partial and full depletion (PD and FD) modes of operation as terminal voltages vary with time (dynamic depletion) has a strong impact on thin film SOI MOSFET characteristics. A model incorporating this effect is presented. It includes floating body, backgate, and body contact nodes, as well as impact ionization, GIDL, diode leakage and parasitic bipolar currents. Self-heating is modeled by an auxiliary R/sub th/C/sub th/ circuit. The model uses a single smooth equation over all operating regimes for each current and charge and is fully scalable with T/sub si/, T/sub box/, T/sub ox/, W, and L.