A Novel Flash Memory Device With S Plit Gate Source Side Injection And 0N0 Charge Storage Stack (SPIN)

1997 Symposium on VLSI Technology Pub Date : 1997-06-10 DOI:10.1109/VLSIT.1997.623696

Wei-ming Chen, Swift, Roberts, Forbes, Higman, Maiti, Paulson, Kuo-tung Chang

引用次数: 12

Abstract

This paper discusses a novel flash memory featuring a selfaligned split gate structure with sub-0.lpm sidewall gate length, source side injection for programming, band-to-band tunneling for erasing, and an oxide/nitride/oxide (ONO) stack for charge storage. The bitcell is suitable for low voltage (1.8V) and high density (cell size 1.35 km2 using 0.4 Fm technology) applications.

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S分栅源侧注入和0N0电荷存储堆栈(SPIN)的新型闪存器件

本文讨论了一种具有亚0自对齐分栅结构的新型闪存。lpm边墙栅极长度，用于编程的源侧注入，用于擦除的带对带隧道，以及用于电荷存储的氧化物/氮化物/氧化物(ONO)堆栈。bitcell适用于低电压(1.8V)和高密度(使用0.4 Fm技术的电池尺寸1.35 km2)应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1997 Symposium on VLSI Technology

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