Physical modeling of rinsing and cleaning of submicron trenches

Hong Lin, A. Busnaina, I. Suni
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引用次数: 4

Abstract

Cleaning of surfaces and submicron deep trenches is a tremendous challenge in semiconductor manufacturing. In this work, the rinsing of blanket and patterned wafers using pulsating flow are studied using physical numerical modeling. Preliminary results on blanket wafers cleaning process show good agreement with numerical and experimental results of literatures. Preliminary results for blanket and patterned wafers show that oscillating flow rinse is more efficient than steady flow rinse, and the optimum frequency of the oscillating flow is a function of the size of the trench.
亚微米沟槽冲洗和清洗的物理模型
表面和亚微米深沟槽的清洁是半导体制造中的巨大挑战。本文采用物理数值模拟的方法,研究了脉冲流对薄膜和图案硅片的冲洗。初步研究结果与文献中的数值和实验结果吻合较好。初步结果表明,振荡流冲洗比定流冲洗更有效,振荡流冲洗的最佳频率与沟槽尺寸有关。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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