Direct extraction of SPICE level 3 parameters without using optimization

Abstract

Direct extraction methods for X/sub j/, V/sub t0/, V/sub max/ and kappa in SPICE level 3 parameters have been developed to control the parameter scatters caused by variations in the fabrication process. When using the parameter values extracted with these methods, the simulated current-voltage characteristics of a short-channel MOSFET device fit the measured ones accurately. The values obtained are almost the same as can be obtained using optimized parameter values. Since the parameter values extracted reflect the scatters directly, the methods are effective for use in such circuit designs.<>