Chemical and Plasma Oxidation Behaviors of NiSi and NiPtSi Salicide Films in 65nm Node CMOS Process

Abstract

The chemical and plasma oxidation behaviors of NiSi and NiPtSi salicide films in a 65 nm node CMOS device fabrication process have been investigated. By incorporating Pt into the nickel salicide formation process, the oxidation rate can be effectively reduced during both salicidation etch/clean and contact plasma etch processes. Data collected from this study suggests both stronger chemical bonding from PtSi and the aggregation of Pt near film surface attribute to this good oxidation resistance property.