{"title":"In-situ study the morphology, growth kinetics and mechanism of Cu6Sn5 at the SnAgCu/Cu soldering interfaces during the cooling stage","authors":"Bingfeng Guo","doi":"10.1109/ICEPT50128.2020.9202589","DOIUrl":null,"url":null,"abstract":"In this paper, the IMC (Cu6Sn5) morphology evolution was observed by using Shanghai Light Source Synchrotron Radiation (SSRF) and high-pressure air technology. Comparing with complete reflow experiments, IMC growth data during the cooling stage was obtained to study the growth process of typical Cu6Sn5 grain morphology evolution. The results are as follows: (1) The morphology of interfacial Cu6Sn5 during the cooling stage is changed from scallop to facet or prism. Liquid channels between Cu6Sn5 grains were also in-situ observed. The presence of liquid channels increases the diffusion flux of Cu grain boundaries and reduces the IMC growth activation energy, indicating that the addition of Ag can hinder the lateral merging of Cu6Sn5 grain boundary during the heat preservation. Simultaneously, the channels also promote the vertical growth of Cu6Sn5 grains to get a smaller aspect ratio at Sn-3.5Ag-0.7Cu(SAC3507)/Cu interface than Sn/Cu. (2) The growth thickness of IMC during the cooling stage follows the rule of h=kt, which is the reaction control mechanism of the Cu precipitation interface. (3) The interfacial Cu6Sn5 growth during the cooling stage is affected by the pinning effect of Ag3Sn nanoparticles and the Cu precipitation flux. Finally, under the same soldering conditions, the Cu6Sn5 thickness at SAC3507/Cu soldering interface during the cooling stage is thicker than Sn/Cu.","PeriodicalId":136777,"journal":{"name":"2020 21st International Conference on Electronic Packaging Technology (ICEPT)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 21st International Conference on Electronic Packaging Technology (ICEPT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEPT50128.2020.9202589","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper, the IMC (Cu6Sn5) morphology evolution was observed by using Shanghai Light Source Synchrotron Radiation (SSRF) and high-pressure air technology. Comparing with complete reflow experiments, IMC growth data during the cooling stage was obtained to study the growth process of typical Cu6Sn5 grain morphology evolution. The results are as follows: (1) The morphology of interfacial Cu6Sn5 during the cooling stage is changed from scallop to facet or prism. Liquid channels between Cu6Sn5 grains were also in-situ observed. The presence of liquid channels increases the diffusion flux of Cu grain boundaries and reduces the IMC growth activation energy, indicating that the addition of Ag can hinder the lateral merging of Cu6Sn5 grain boundary during the heat preservation. Simultaneously, the channels also promote the vertical growth of Cu6Sn5 grains to get a smaller aspect ratio at Sn-3.5Ag-0.7Cu(SAC3507)/Cu interface than Sn/Cu. (2) The growth thickness of IMC during the cooling stage follows the rule of h=kt, which is the reaction control mechanism of the Cu precipitation interface. (3) The interfacial Cu6Sn5 growth during the cooling stage is affected by the pinning effect of Ag3Sn nanoparticles and the Cu precipitation flux. Finally, under the same soldering conditions, the Cu6Sn5 thickness at SAC3507/Cu soldering interface during the cooling stage is thicker than Sn/Cu.
本文利用上海光源同步辐射(SSRF)和高压空气技术对IMC (Cu6Sn5)的形貌演变进行了观察。通过与完全回流实验的对比,获得了冷却阶段的IMC生长数据,研究了典型Cu6Sn5晶粒形貌的生长过程。结果表明:(1)Cu6Sn5在冷却阶段界面形貌由扇形变为小面或棱形;在Cu6Sn5晶粒间还观察到液相通道。液相通道的存在增加了Cu晶界的扩散通量,降低了IMC生长活化能,说明Ag的加入阻碍了Cu6Sn5晶界在保温过程中的侧向合并。同时,这些通道还促进了Cu6Sn5晶粒的垂直生长,使得Sn-3.5 ag -0.7Cu(SAC3507)/Cu界面的展弦比小于Sn/Cu界面。(2)冷却阶段IMC生长厚度遵循h=kt规律,这是Cu析出界面的反应控制机制。(3)冷却阶段界面Cu6Sn5的生长受Ag3Sn纳米颗粒钉钉效应和Cu析出通量的影响。最后,在相同的焊接条件下,冷却阶段SAC3507/Cu焊接界面处的Cu6Sn5厚度比Sn/Cu厚。