Y. Ogasahara, T. Sekigawa, M. Hioki, T. Nakagawa, T. Tsutsumi, H. Koike
{"title":"Reduction of overhead in adaptive body bias technology due to triple-well structure based on measurement and simulation","authors":"Y. Ogasahara, T. Sekigawa, M. Hioki, T. Nakagawa, T. Tsutsumi, H. Koike","doi":"10.1109/ICMTS.2015.7106154","DOIUrl":null,"url":null,"abstract":"This paper presents the significant reduction of the area overhead due to triple-well structure for adaptive body bias methods. Triple-well TEGs which include violation of design rules originating from voltage tolerance were implemented on a 65nm process. Reexamining voltage tolerance based on measurement results reduced deep n-wells spacing by 60% on the 65nm process. A new method for further overhead reduction is proposed based on a device simulation which is validated with measurement results.","PeriodicalId":177627,"journal":{"name":"Proceedings of the 2015 International Conference on Microelectronic Test Structures","volume":"45 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2015 International Conference on Microelectronic Test Structures","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.2015.7106154","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
This paper presents the significant reduction of the area overhead due to triple-well structure for adaptive body bias methods. Triple-well TEGs which include violation of design rules originating from voltage tolerance were implemented on a 65nm process. Reexamining voltage tolerance based on measurement results reduced deep n-wells spacing by 60% on the 65nm process. A new method for further overhead reduction is proposed based on a device simulation which is validated with measurement results.