The modified HSINFET using the trenched JBS injector

Abstract

A Hybrid Schottky INjector Field Effect Transistor (HSINFET) which increases the forward conduction current without sacrificing the latch-up capability and turn-off characteristics, is proposed. The feature of the structure is that the hybrid Schottky injector is implemented by the trench sidewall Schottky contact and p-n junction injector at the bottom of a trench. The device characteristics of the proposed HSINFET are numerically simulated and compared with conventional devices. The proposed HSINFET exhibits a lower forward voltage drop than the conventional HSINFET by 0.4 V at 100 A/cm/sup 2/.