The effect of mechanical stress from stopping nitride to the reliability of tunnel oxide and data retention characteristics of NAND FLASH memory

Abstract

One of the most important characteristics of NAND FLASH memory is data retention. Data retention characteristics depends on the reliability of tunnel oxide under constant current (F/N) stress with respect to defects such as interface states and defects responsible for SILC (stress-induced-leakage-current). Even though the reliability of tunnel oxide is determined by tunnel oxidation itself, various subsequent processes also can influence it. Here, we want to report the impact of mechanical stress on stopping nitride, which is used as an etch stopper, on the reliability of tunnel oxide and data retention characteristics.