Photoemission characteristics of reverse-breakdown n/sup +/-diodes with LOCOS- and trench-isolation

Abstract

Photoemission-intensity profiles and photoemission images, with and without an optical filter, and anisotropic characteristics of the photon count from a reverse-biased n/sup +/-diode fabricated by local oxidation of silicon (LOCOS)- and trench-isolation are measured. Similar profiles are observed independently on the emitted photon energies. The fluctuations of the experimental results are relatively larger in trench-isolated diodes than those in LOCOS-isolated ones. The fluctuations decrease as the reverse current increases.<>