A comparison of electrical performance between a wire bonded and a flip chip CSP package

S. Pan, R. Kapoor, A. Sun, C. K. Wang, H. Low
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引用次数: 5

Abstract

In this paper, electrical simulations are performed to characterize a wire-bonded window CSP (wCSP/sup TM/) package and a flip chip CSP (fcCSP) package designed for the same die. Results indicate that fcCSP has a slightly wider bandwidth than window CSP. Although, window CSP has a larger parasitic resistance and inductance for the target nets, it has a lower crosstalk in terms of peak-peak voltage due to shorter parallel traces. An optimized flip chip design is proposed and the results show a vast improvement over the wire bonded CSP package. Parametric studies are also performed to investigate the effects of bond wires with different diameter and horizontal distance, and variations in signal traces. These results provide useful insights on design and process selection for high-performance semiconductor packages.
线键合和倒装CSP封装的电性能比较
本文进行了电学模拟,以表征为同一芯片设计的线键窗口CSP (wCSP/sup TM/)封装和倒装CSP (fcCSP)封装。结果表明,fcCSP具有比窗口CSP稍宽的带宽。虽然窗口CSP对目标网具有较大的寄生电阻和电感,但由于更短的并联走线,它在峰值电压方面具有较低的串扰。提出了一种优化的倒装芯片设计,结果表明,与线键合CSP封装相比,倒装芯片有了很大的改进。参数研究也进行了研究不同直径和水平距离的键合线的影响,以及信号走线的变化。这些结果为高性能半导体封装的设计和工艺选择提供了有用的见解。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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