A Novel Gate-Sensing and Channel-Sensing Transient Analysis Method for Real-Time Monitoring of Charge Vertical Location in Sonos-Type Devices and its Applications in Reliability Studies

2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Pub Date : 2007-04-01 DOI:10.1109/RELPHY.2007.369889

H. Lue, P. Du, Szu-Yu Wang, E. Lai, K. Hsieh, Rich Liu, Chih-Yuan Lu

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引用次数: 16

Abstract

By using poly-gate-sensing in addition to the conventional channel-sensing for Vt (or VFB) presents a novel transient analysis method that is very powerful to monitor the trapped charge vertical location in real time. The sensing in both modes provides two equations that are suitable to solve for two variables - the charge density (Q) and the average charge vertical location (x). Without the second equation (from poly-gate-sensing) Q and x cannot be de-convoluted. The power of this new technique is demonstrated by several examples of reliability studies for SONOS-type devices. The charge trapping efficiency of silicon nitride of different thickness is examined. The charge migration during program/erase cycling and data retention information is observed for the first time using this new tool. The method presented in this work is indeed a powerful tool for detailed understanding of trapping dynamics.

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一种新型的sonos型器件电荷垂直位置实时监测的栅极传感和通道传感暂态分析方法及其在可靠性研究中的应用

在传统通道传感的基础上，提出了一种新的瞬态分析方法，可以实时监测捕获电荷的垂直位置。两种模式下的传感都提供了两个方程，适用于求解两个变量-电荷密度(Q)和平均电荷垂直位置(x)。没有第二个方程(来自多极传感)Q和x不能解卷积。这种新技术的力量通过几个sonos型设备可靠性研究的例子得到了证明。研究了不同厚度氮化硅的电荷俘获效率。在程序/擦除循环和数据保留信息期间，首次使用该新工具观察到电荷迁移。这项工作中提出的方法确实是详细了解捕获动力学的有力工具。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual

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