A modular high temperature measurement set-up for semiconductor device characterization

Abstract

We demonstrate the capabilities of a high temperature measurement set-up recently developed at our institute. It is dedicated to the characterization of semiconductor devices and test structures in the temperature range from room temperature up to 500degC and higher. A detailed description of the experimental equipment is given. Its practical use is demonstrated by measuring temperature-dependent characteristics of silicon VDMOSFET and IGBT devices as well as SiC-diodes. For the silicon devices, numerical simulations based on recently developed high temperature physical models were also performed in order to gain a deeper understanding of the measured data, together with a revalidation of the model parameters.