A First-principles Study on the Strain-induced Localized Electronic Properties of Dumbbell-shape Graphene Nanoribbon for Highly Sensitive Strain Sensors

Qinqiang Zhang, Ken Suzuki, H. Miura
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Abstract

The electronic properties of graphene nanoribbons (GNRs) have a function of the ribbon width. It can vary from metallic-like ones to semiconductive-like ones when the width of single GNR is changed. Therefore, the novel structure of GNRs called dumbbell-shape GNR (DS-GNR) was proposed to achieve the development of highly sensitive, reliable, and deformable strain sensors. The DS-GNR consists of one long narrow GNR coalesced by two wide segments of GNRs at its both ends. The wide segments of the original DSGNR possess the metallic-like electronic properties and the narrow segment of the original DS-GNR has the semiconductive-like electronic properties. In this study, the strain-induced change of the electronic band structure of DSGNR was analyzed by using the first-principles calculations. The range of the applied uniaxial tensile strain on DS-GNR was from 0% to 10%. When the length of the narrow segment of DSGNR is longer than 4.3 nm, the effective bandgap located in the narrow segment changes obviously with the change of applied strain. The result indicates that the piezoresistive effect appears in the narrow segment of DS-GNR, and thus high strain sensitivity of its resistivity can be applied to strain sensors.
高灵敏度应变传感器用哑铃形石墨烯纳米带应变诱导局域电子特性的第一性原理研究
石墨烯纳米带的电子性能与纳米带宽度成函数关系。当单个GNR的宽度改变时,它可以从金属状到半导体状变化。为此,提出了一种新型的GNR结构——哑铃形GNR (DS-GNR),以实现高灵敏度、高可靠性、高变形应变传感器的研制。DS-GNR由一个长而窄的GNR组成,在其两端由两个宽的GNR段合并。原DSGNR的宽段具有类似金属的电子性质,窄段具有类似半导体的电子性质。本研究采用第一性原理计算分析了DSGNR电子能带结构的应变变化。施加在DS-GNR上的单轴拉伸应变范围为0% ~ 10%。当DSGNR窄段长度大于4.3 nm时,窄段内的有效带隙随外加应变的变化变化明显。结果表明,压阻效应出现在DS-GNR的窄段,其电阻率具有较高的应变灵敏度,可应用于应变传感器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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