Investigation on a miniaturized X-band transceiver front-end in a cost-effective SiP solution

Y. Ban, Jie Liu
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引用次数: 1

Abstract

This paper presents a feasible and efficient implementation of a miniaturized X-band transceiver front-end in a cost-effective system-in-package (SiP) technology. Integrating multiple radio-frequency (RF) GaAs / GaN dies with land grid array (LGA) packages is one of the most commonly used solutions in wireless application. Meanwhile, incorporating the RF power devices with quad flat no-lead (QFN) package is a promising substitute due to good thermal conductivity, which utilizes a large die pad in the center which directly transfers the heat from the GaAs / GaN dies from the package to the outside. In this work, an integrated X-band transceiver is designed and implemented with the LGA and QFN technology, respectively. Subsequently, an overall system-level performance investigation and comparison has been analyzed and illustrated. Moreover, the detailed thermal-electrical / thermal-mechanical analysis and comparison are presented in this paper. According to the simulation results, the proposed SiP layout achieves good power performance and reliability with acceptable costs. Finally, the 8-12GHz transceiver is respectively implemented in a QFN and LGA technology, achieving a similar performance and specification. The total package size of the X-band transceiver is slightly different, which is 9*12 mm2 (QFN) and 11*14 mm2 (LGA).
低成本SiP解决方案中小型化x波段收发器前端的研究
本文提出了一种可行且高效的小型化x波段收发器前端实现方案,该方案采用低成本的系统级封装(SiP)技术。将多个射频(RF) GaAs / GaN芯片与陆地网格阵列(LGA)封装集成是无线应用中最常用的解决方案之一。同时,将射频功率器件与四平面无引线(QFN)封装结合是一种很有前途的替代品,因为它具有良好的导热性,它利用中心的大型晶片直接将GaAs / GaN芯片的热量从封装传递到外部。本文采用LGA和QFN技术设计并实现了一个集成的x波段收发器。随后,对整个系统级的性能调查和比较进行了分析和说明。此外,本文还进行了详细的热电/热力学分析和比较。仿真结果表明,所提出的SiP布局具有良好的功耗性能和可靠性,且成本合理。最后,8-12GHz收发器分别采用QFN和LGA技术实现,实现了相似的性能和规格。x波段收发器的总封装尺寸略有不同,为9*12 mm2 (QFN)和11*14 mm2 (LGA)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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