{"title":"Analysis of gate currents through high-k dielectrics using a Monte Carlo device simulator [MOSFET applications]","authors":"Y. Ohkura, C. Suzuki, H. Amakawa, K. Nishi","doi":"10.1109/SISPAD.2003.1233639","DOIUrl":null,"url":null,"abstract":"The gate current through high-k dielectrics has been calculated by a Monte Carlo simulator. In high-k dielectrics, the gate current from the drain edge is dominant and is quite serious due to a lowering of the barrier height with an increasing dielectric constant. The stack structure of high-k dielectric and oxide films is effective to suppress gate current densities generated from high-energy carriers generated near the drain edge.","PeriodicalId":220325,"journal":{"name":"International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.","volume":"1990 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2003.1233639","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
The gate current through high-k dielectrics has been calculated by a Monte Carlo simulator. In high-k dielectrics, the gate current from the drain edge is dominant and is quite serious due to a lowering of the barrier height with an increasing dielectric constant. The stack structure of high-k dielectric and oxide films is effective to suppress gate current densities generated from high-energy carriers generated near the drain edge.