Low temperature SDB and interface behaviours

Abstract

In this paper, the realization and quality evaluation of low temperature silicon direct bonding(LTSDB) have been described. Through HREM and SIMS methods, the bonding interface characteristics were investigated. The interface structure, such as dislocations and randomly distribution of Si02, were observed in HREM images. The SIhlS results showed the distribution near the bonding interface and other properties of Si-H atomic groups. We proposed a new two-step LTSDB mechanism.