CVD copper thin film deposition by using (1-pentene)Cu(I)(hfac)

Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407) Pub Date : 2000-06-05 DOI:10.1109/IITC.2000.854320

W. Zhuang, L. J. Charneski, D.R. Evans, S. Hsu

引用次数: 2

Abstract

Pure copper thin films have been deposited on both TiN and TaN substrates via CVD process by using a new volatile copper precursor, (1-pentene)Cu(I)(hfac). The effect of CVD process conditions on film properties has been investigated. The copper nucleus size is about 200 /spl Aring/. The results indicate that both high deposition rate and low resistivity of copper thin films can be obtained by using (1-pentene)Cu(I)(hfac).

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(1-戊烯)Cu(I)(hfac) CVD沉积铜薄膜

采用一种新的挥发性铜前驱体(1-戊烯)Cu(I)(hfac)，通过CVD工艺在TiN和TaN衬底上沉积了纯铜薄膜。研究了CVD工艺条件对薄膜性能的影响。铜核尺寸约为200 /spl /。结果表明，使用(1-戊烯)Cu(I)(hfac)可以获得高沉积速率和低电阻率的铜薄膜。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)

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