Measurement of the strength of a grain boundary in electroplated copper thin-film interconnections by using micro tensile-test

T. Shinozaki, T. Nakanishi, K. Suzuki, H. Miura
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引用次数: 1

Abstract

In this study, a micro tensile test method that can measure the interface strength of a grain boundary has been developed by applying an EBSD (Electron Back-Scatter Diffraction) method and a FIB (Focused Ion Beam) system, and it was applied to evaluate the effect of the crystallinity of a grain boundary on the strength of electroplated copper thin films quantitatively. The position and crystallinity of a grain boundary in a polycrystalline electroplated copper thin film were preliminarily determined by EBSD method, and the micro scale test specimen was cut out from the appropriate area in the film by using FIB. Therefore, a bicrystal sample which consisted of the characterized single grain boundary was cut from a polycrystalline thin film, and the strength of one grain or one grain boundary was measured quantitatively. In this study, the crystallinity of grains and grain boundaries was evaluated by using Image Quality (IQ) value obtained from the EBSD method. As a result, the fracture mode and strength of the polycrystalline copper thin films were found to vary drastically depending on the crystallinity of the grain boundary. The specimens including a grain boundary with average IQ value lower than 3500 showed brittle fracture at the grain boundary. On the other hand, in the specimens with average IQ value higher than 3500 showed ductile transgranular fracture. In addition, it was confirmed that the strength of a grain boundary with average IQ value lower than 3500 decreased with decreasing the IQ value and the yield strength of a grain decreased with increasing the average IQ value of a grain. It is, therefore, very important to control the crystallinity for assuring the stable and reliable operation of thin film devices using the electroplated copper interconnections.
用微拉伸试验测量电镀铜薄膜连接件的晶界强度
本研究采用电子背散射衍射(EBSD)方法和聚焦离子束(FIB)系统,建立了一种可以测量晶界界面强度的微拉伸测试方法,并应用该方法定量评价了晶界结晶度对电镀铜薄膜强度的影响。用EBSD法初步测定了多晶电镀铜薄膜中晶界的位置和结晶度,并用FIB法在薄膜中适当区域切割出微尺度试样。因此,从多晶薄膜上切下由所表征的单晶界组成的双晶样品,定量测量单晶或单晶界的强度。在本研究中,利用EBSD方法获得的图像质量(IQ)值来评价晶粒的结晶度和晶界。结果表明,多晶铜薄膜的断裂模式和强度随晶界结晶度的变化而发生显著变化。平均IQ值低于3500的含晶界试样晶界处呈现脆性断裂。而平均IQ值大于3500的试样则表现为延性穿晶断裂。平均IQ值低于3500的晶界强度随IQ值的减小而减小,晶粒屈服强度随平均IQ值的增大而减小。因此,控制结晶度对于保证使用电镀铜互连的薄膜器件稳定可靠地工作非常重要。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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