S. Z. Rahaman, S. Maikap, C. Lin, T. Wu, Y. S. Chen, P. Tzeng, F. Chen, C. S. Lai, M. Kao, M. Tsai
{"title":"Low current and voltage resistive switching memory device using novel Cu/Ta2O5/W structure","authors":"S. Z. Rahaman, S. Maikap, C. Lin, T. Wu, Y. S. Chen, P. Tzeng, F. Chen, C. S. Lai, M. Kao, M. Tsai","doi":"10.1109/VTSA.2009.5159279","DOIUrl":null,"url":null,"abstract":"Low current/voltage (∼10 nA/1.0V) resistive switching memory device in a Cu/Ta<inf>2</inf>O<inf>5</inf>/W structure has been proposed. The low resistance state (R<inf>Low</inf>) of the memory device decreases with increasing the programming current from 10 nA to 1mA, which can be useful for multi-level of data storage. This resistive memory devices have stable threshold voltage, good resistance ratio (R<inf>High</inf>/R<inf>Low</inf>) of 5.3×10<sup>7</sup>, good endurance of ≫10<sup>3</sup> cycles, and excellent retention (≫11 hours) with resistance ratio of ≫ 9×10<sup>3</sup> can be useful in future non-volatile memory applications.","PeriodicalId":309622,"journal":{"name":"2009 International Symposium on VLSI Technology, Systems, and Applications","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2009-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 International Symposium on VLSI Technology, Systems, and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VTSA.2009.5159279","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
Low current/voltage (∼10 nA/1.0V) resistive switching memory device in a Cu/Ta2O5/W structure has been proposed. The low resistance state (RLow) of the memory device decreases with increasing the programming current from 10 nA to 1mA, which can be useful for multi-level of data storage. This resistive memory devices have stable threshold voltage, good resistance ratio (RHigh/RLow) of 5.3×107, good endurance of ≫103 cycles, and excellent retention (≫11 hours) with resistance ratio of ≫ 9×103 can be useful in future non-volatile memory applications.
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