A silicon-based parabolic sub-THz reflector antenna for gain enhancement and near-field focus applications

M.-T. Hsu, Te-Yen Chiu, Sirao Wu, Y. Cheng, C.-H. Li, C. Kuo
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引用次数: 3

Abstract

This paper presents the first silicon-based parabolic Sub-THz reflector antenna with corresponding fabrication processes. The antenna is side fed with an on-chip 340 GHz patch antenna on a reflector made of stacked micromachined silicon substrates with a parabolic-shaped Kapton film coated with aluminum on top. The antenna with a size of 18 ×18 ×4 mm3 and an aperture of ∼10mm can be easily integrated with monolithic microwave integrated circuit sources, i.e. 40 nm CMOS triple-push oscillator in this case, and exhibit not only ∼12.4 dB directive gain enhancement and 4.34° HPBW (Half Power Beam Width) for far field radiation but also an excellent near field focus characteristic with a 28.5 mm depth of field (DOF).
一种用于增益增强和近场聚焦应用的硅基抛物面亚太赫兹反射器天线
本文提出了第一个基于硅的亚太赫兹抛物面反射天线,并给出了相应的制作工艺。该天线的侧馈是一个片上340 GHz贴片天线,其反射器由堆叠的微机械硅衬底和顶部涂有铝的抛物线形卡普顿薄膜制成。尺寸为18 ×18 ×4 mm3,孔径为~ 10mm的天线可以很容易地与单片微波集成电路源(即40 nm CMOS三推振荡器)集成,不仅具有~ 12.4 dB的定向增益增强和4.34°HPBW(半功率波束宽度)的远场辐射,而且具有出色的近场聚焦特性,具有28.5 mm的景深(DOF)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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