RESET-first Resistance Switching Mechanism of HfO2 films with Ti electrode

Abstract

RESET-first resistive switching mechanism in HfO_2-x with Ti electrode was studied. RESET resistive switching was observed in annealed Ti/HfO₂ film. The redox phenomenon from Ti/HfO₂ to TiO_x/HfO_2-x was investigated with high angle annular dark field-scanning transmission electron microscopy, EDX, and x-ray photoelectron spectroscopy. Analysis shows that redox reaction from Ti/HfO₂ to TiOx/HfO_2-x was responsible for an increase of initial current with increasing the post-annealing temperature and the migration of oxygen ions at interface region under external electrical bias was contributed to bipolar resistive switching behavior.