Comparison of numerical quantum device models

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. Pub Date : 2003-09-01 DOI:10.1109/SISPAD.2003.1233664

H. Kosina, M. Nedjalkov, S. Selberherr

{"title":"Comparison of numerical quantum device models","authors":"H. Kosina, M. Nedjalkov, S. Selberherr","doi":"10.1109/SISPAD.2003.1233664","DOIUrl":null,"url":null,"abstract":"The Wigner equation and non-equilibrium Green's functions are two formalisms widely used in quantum device simulation. The Wigner equation, commonly solved by finite difference methods, is solved in this work by a recently developed Monte Carlo method. This method resolves both quantum interference and dissipation effects due to scattering with equal accuracy. Both limits, namely the pure quantum ballistic case and the scattering-dominated classical case are treated properly. A comparison of the Wigner MC solver and NEMO-ID is presented. Resonant tunneling diodes from the literature are chosen as benchmark devices. Current/voltage characteristics are compared for different temperatures and the effect of scattering on the current and the charge distribution is shown. Practical device simulation limitations of the Wigner MC method are discussed. Provided that numerical parameters of the Wigner MC method such as the coherence length and the grid size are chosen properly, results are obtained in good quantitative agreement with NEMO-1D.","PeriodicalId":220325,"journal":{"name":"International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2003.1233664","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 7

Abstract

The Wigner equation and non-equilibrium Green's functions are two formalisms widely used in quantum device simulation. The Wigner equation, commonly solved by finite difference methods, is solved in this work by a recently developed Monte Carlo method. This method resolves both quantum interference and dissipation effects due to scattering with equal accuracy. Both limits, namely the pure quantum ballistic case and the scattering-dominated classical case are treated properly. A comparison of the Wigner MC solver and NEMO-ID is presented. Resonant tunneling diodes from the literature are chosen as benchmark devices. Current/voltage characteristics are compared for different temperatures and the effect of scattering on the current and the charge distribution is shown. Practical device simulation limitations of the Wigner MC method are discussed. Provided that numerical parameters of the Wigner MC method such as the coherence length and the grid size are chosen properly, results are obtained in good quantitative agreement with NEMO-1D.

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数值量子器件模型的比较

Wigner方程和非平衡格林函数是量子器件模拟中广泛使用的两种形式。通常用有限差分方法求解的Wigner方程，在本工作中采用了最近发展的蒙特卡罗方法求解。该方法以同样的精度解决了量子干涉和散射引起的耗散效应。这两个极限，即纯量子弹道情况和散射主导的经典情况都得到了适当的处理。对Wigner MC求解器和NEMO-ID进行了比较。从文献中选择谐振隧道二极管作为基准器件。比较了不同温度下的电流/电压特性，并给出了散射对电流和电荷分布的影响。讨论了Wigner MC方法在实际器件仿真中的局限性。在合理选择Wigner MC方法的相干长度和网格尺寸等数值参数的情况下，得到的结果与NEMO-1D的定量结果基本一致。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.

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