L. Vancaillie, V. Kilchytska, P. Delatte, L. Demeus, H. Matsuhashi, F. Ichikawa, D. Flandre
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引用次数: 5
Abstract
In this paper, the temperature dependence of transistor fabricated in a thin film deep submicron SOI MOSFET fully depleted process, junction leakage current and transconductance were evaluated.
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