Boron diffusion model refinement and its effect on the calculation of reverse short channel effect

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI:10.1109/SISPAD.1996.865251

M. Hane, C. Rafferty, T. Ikezawa, H. Matsumoto

引用次数: 1

Abstract

The reverse short channel effect (RSCE) of flat channel profile nMOSFET was studied by modelling the dopant diffusion process and considering its parameter dependence. It was found that the binding energy between boron (B) and interstitial silicon (I) is one of the key parameters for the quantitative description of the boron diffusion and the RSCG.

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硼扩散模型的改进及其对逆短通道效应计算的影响

通过模拟掺杂扩散过程并考虑其参数依赖性，研究了平沟道型nMOSFET的反向短沟道效应。硼(B)与硅(I)之间的结合能是定量描述硼扩散和RSCG的关键参数之一。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)

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