Resistance modeling of test structures for accurate fault detection in backend process steps using a digital tester

C. Hess, L. Weiland
{"title":"Resistance modeling of test structures for accurate fault detection in backend process steps using a digital tester","authors":"C. Hess, L. Weiland","doi":"10.1109/ICMTS.1995.513985","DOIUrl":null,"url":null,"abstract":"A methodology is presented to enable the usage of a digital tester for an accurate detection of open circuits as well as short circuits in test structures to control backend process steps. Therefore, a novel graph model will be introduced to calculate the resistance values of test structures containing defects. The paper gives a comprehensive description of the procedure to adjust the tester parameters to those test structures.","PeriodicalId":432935,"journal":{"name":"Proceedings International Conference on Microelectronic Test Structures","volume":"246 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings International Conference on Microelectronic Test Structures","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.1995.513985","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7

Abstract

A methodology is presented to enable the usage of a digital tester for an accurate detection of open circuits as well as short circuits in test structures to control backend process steps. Therefore, a novel graph model will be introduced to calculate the resistance values of test structures containing defects. The paper gives a comprehensive description of the procedure to adjust the tester parameters to those test structures.
测试结构的电阻建模,以便在后端工艺步骤中使用数字测试仪进行准确的故障检测
提出了一种方法,使使用数字测试仪准确检测开路以及测试结构中的短路,以控制后端过程步骤。因此,将引入一种新的图模型来计算含有缺陷的测试结构的电阻值。本文全面介绍了调整试验结构参数的过程。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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