Process capability of etched multilayer EUV mask

K. Takai, Noriko Iida nee Sakurai, T. Kamo, Yasutaka Morikawa, N. Hayashi
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引用次数: 3

Abstract

With shrinking pattern size at 0.33NA EUV lithography systems, mask 3D effects are expected to become stronger, such as horizontal/vertical shadowing, best focus shifts through pitch and pattern shift through focus. Etched multilayer EUV mask structures have been proposed in order to reduce mask 3D effects. It is estimated that etched multilayer type mask is also effective in reducing mask 3D effects at 0.33NA with lithographic simulation, and it is experimentally demonstrated with NXE3300 EUV Lithography system. We obtained cross-sectional TEM image of etched multilayer EUV mask pattern. It is observed that patterned multilayer width differs from pattern physical width. This means that effective reflecting width of etched multilayer pattern is smaller than pattern width measured by CD-SEM. In this work, we evaluate mask durability against both chemical and physical cleaning process to check the feasibility of etched multilayer EUV mask patterning against mask cleaning for 0.33NA EUV extension. As a result, effective width can be controlled by suitable cleaning chemicals because sidewall film works as a passivation film. And line and space pattern collapse is not detected by DUV mask pattern inspection tool after mask physical cleaning that includes both megasonic and binary spray steps with sufficient particle removal efficiency.
刻蚀多层EUV掩模的工艺性能
在0.33NA的EUV光刻系统中,随着图案尺寸的缩小,掩模3D效果有望变得更强,例如水平/垂直阴影,通过节距实现最佳焦点移位和通过焦点实现图案移位。为了降低掩模的3D效果,提出了刻蚀多层EUV掩模结构。通过光刻模拟估计,蚀刻多层型掩模在0.33NA下也能有效降低掩模3D效果,并在NXE3300 EUV光刻系统上进行了实验验证。我们获得了刻蚀多层EUV掩模图案的透射电镜横截面图像。观察到图案化多层宽度不同于图案化物理宽度。这意味着蚀刻多层图案的有效反射宽度小于CD-SEM测量的图案宽度。在这项工作中,我们评估了掩膜在化学和物理清洗过程中的耐久性,以检查蚀刻多层EUV掩膜图案在0.33NA EUV扩展的掩膜清洗中的可行性。因此,有效宽度可以由合适的清洁化学品控制,因为侧壁膜作为钝化膜。采用具有足够颗粒去除效率的超声速和二元喷雾步骤进行面罩物理清洗后,DUV面罩图案检测工具未检测到线和空间图案塌陷。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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