Band engineered tunnel oxides for improved TANOS-type flash program/erase with good retention and 100K cycle endurance

2009 International Symposium on VLSI Technology, Systems, and Applications Pub Date : 2009-04-27 DOI:10.1109/VTSA.2009.5159337

D. Gilmer, N. Goel, S. Verma, Hokyung Park, Chanro Park, G. Bersuker, P. Kirsch, K. Saraswat, R. Jammy

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引用次数: 10

Abstract

We demonstrate for the first time improved program, erase, and endurance for charge trap flash TaN-Al2O3-Si3N4-“Tunnel-oxide (TO)”-Si MOSFETs through band engineered tunnel oxides (BETO). Several high-K dielectrics (HfO2, HfSiO, Al2O3, Si3N4) and tunnel stack sequences (SiO2-high-k, SiO2-high-k-SiO2) are compared. New results are as follows: SiO2/Al2O3 (OA) BE-TO and SiO2/Si3N4/SiO2 (ONO) BE-TO ΔVth windows improve ≫300% vs. standard SiO2-TO. Both OA and ONO stacks endure P/E cycles to at least 100K cycles maintaining a window ≫4V. Results are consistent with a model based on high-k conduction/valence band offsets. Increased erase efficiency for BE-TO enables improved endurance without sacrificing P/E window due to lower P/E voltage stressing. These large, enduring windows are favorable for multi-level cell application and may extend TANOS flash beyond the 20nm node.

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带状工程隧道氧化物，用于改进tanos型闪存程序/擦除，具有良好的保留率和100K循环耐久性

我们首次展示了通过带工程隧道氧化物(BETO)改进的电荷阱闪光TaN-Al2O3-Si3N4-“隧道氧化物(TO)”- si mosfet的程序，擦除和耐久性。比较了几种高钾介质(HfO2、HfSiO、Al2O3、Si3N4)和隧道叠层(SiO2-high-k、SiO2-high-k- sio2)。新的结果如下:SiO2/Al2O3 (OA) BE-TO和SiO2/Si3N4/SiO2 (ONO) BE-TO ΔVth窗口比标准SiO2- to提高了300%。OA和ONO堆栈都能承受至少100K的P/E循环，保持窗口值在4V以上。结果与基于高k导价带偏移的模型一致。BE-TO的擦除效率提高，可以在不牺牲P/E窗口的情况下提高耐用性，因为P/E电压应力较低。这些大而持久的窗口有利于多级单元应用，并可能将TANOS闪存扩展到20nm节点以上。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2009 International Symposium on VLSI Technology, Systems, and Applications

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