Design of Al pad geometry for reducing current crowding effect in flip-chip solder joint using finite-element analysis

Y. Chang, Chih Chen
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引用次数: 1

Abstract

Electromigration of flip-chip solder joints has been studied extensively in recent years. It was investigated in plenty of studies that the current crowding effect takes place at the corner near the traces due to huge differences in cross-section area between traces and solder joint. The local high current density, which has been known as a serious reliability issue, causes the failure such as void formation and the consumption under bump metallization (UBM) to occur much earlier than expected in the current-crowding region in solder bump. As a result, to relieve the current crowding effect can significantly increase the mean-time-to-failure (MTTF) of solder bump. On the base of the Blech's equation, the MTTF may be extended to four times of the original value when the local current density is reduced to half of its original one if the n value is taken as 2. Therefore, finding a robust design of geometry, which is effective and of low cost, has turned into a popular issue. However, there is still no technology can observe the current density directly in a current stressed sample. In order to obtain more precise observation, a three-dimensional finite element model (3D-FEM) was performed to simulate the current density distribution in solder bump. In this study, several voids are designed in the Al pad and distributed as concentric circle shape encircling the passivation opening. With these well defined voids, the maximum current density in solder joint is reduced significantly. For flip-chip structure with 1.5µm thick Al pad, the concentric circular voids could reduce the maximum current density in solder joint by more than 60%. The crowding ratio decreases from 4.03 to 1.72. Even if the Al pad is 12µm thick, the concentric circular voids also reduce the maximum current density by about 35%. The crowding ratio decreases from 2.30 to 1.46. The simulation results indicate the design is effective to relieve the current crowding effect and reduce the maximum current density in flip-chip solder joints. To understand how concentric circular voids influence the thermal distribution of flip-chip structure, a thermal-electric multiphysics model is also performed in this study. The thermal-electric simulation results indicate that the concentric circular void also disperse the local Joule heating effect, which comes from the current crowding effect. This approach facilitates the systemic study of optimized design to relieve the current crowding effect and thus increase the electromigration resistance of solder joints. In addition, the results provide a guideline for optimal design for solder joints with a specific UBM structure.
利用有限元分析设计减小倒装焊点电流拥挤效应的Al焊盘几何结构
近年来,倒装片焊点的电迁移问题得到了广泛的研究。大量研究表明,由于焊道与焊点之间的横截面积差异较大,在焊道附近的拐角处会发生电流拥挤效应。局部高电流密度导致凸点金属化过程中空穴形成和凸点金属化损耗等失效的发生时间大大早于焊料凸点的电流聚集区,这是一个严重的可靠性问题。因此,缓解电流拥挤效应可以显著提高凸点的平均失效时间(MTTF)。在Blech方程的基础上,取n值为2,当局部电流密度减小到原来的一半时,MTTF可以扩展到原来的4倍。因此,寻找一种既有效又低成本的稳健几何设计已成为一个热门问题。然而,目前还没有一种技术可以直接观察到电流应力样品中的电流密度。为了获得更精确的观察结果,建立了三维有限元模型(3D-FEM)来模拟凸点中的电流密度分布。在本研究中,在铝衬垫上设计了几个空洞,并以同心圆的形状围绕钝化开口分布。有了这些明确的空隙,焊点的最大电流密度显著降低。对于1.5µm厚Al衬垫的倒装芯片结构,同心圆孔洞可使焊点最大电流密度降低60%以上。拥挤比由4.03降至1.72。即使Al衬垫厚度为12 μ m,同心圆形空隙也会使最大电流密度降低约35%。拥挤比由2.30降至1.46。仿真结果表明,该设计有效缓解了倒装焊点的电流拥挤效应,降低了倒装焊点的最大电流密度。为了了解同心圆孔如何影响倒装芯片结构的热分布,本研究还进行了热电多物理场模型。热电模拟结果表明,同心圆孔也分散了由电流拥挤效应引起的局部焦耳热效应。这种方法有利于系统地研究优化设计,以缓解电流拥挤效应,从而提高焊点的电迁移电阻。此外,研究结果还为特定UBM结构焊点的优化设计提供了指导。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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