Failure analysis on MEMS resonator device in wafer fabrication

H. Ng, N. Xu, A. Teo, G. Ang, A. Quah, Dayanand, C. Q. Chen, Z. Mai, J. Lam
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Abstract

This paper demonstrates a new de-process flow for MEMS resonator DRG (dc Resistance to Ground) failure analysis, using electrical fault isolation tool of TTVA to locate the defect site. After all, cutting method was performed to de-process MEMS from Si Cap, followed by SEM inspection to successfully observe the physical defect point. Auger analysis was then carried out on the defect point to identify the element contains, hence the root cause of preventing of Carbon and Mo was confirmed.
MEMS谐振器在晶圆制造中的失效分析
本文提出了一种新的微机电系统(MEMS)谐振器DRG(直流接地电阻)故障分析的脱工艺流程,利用TTVA的电气故障隔离工具定位缺陷部位。最后,采用切削法对Si Cap进行MEMS脱加工,然后进行SEM检测,成功观察到物理缺陷点。然后对缺陷点进行俄歇分析,确定所含元素,从而确定了阻止碳、钼的根本原因。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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