MRAM write error categorization with QCKBD

Y. Shimizu, H. Aikawa, K. Hosotani, N. Shimomura, T. Kai, Y. Ueda, Y. Asao, Y. Iwata, K. Tsuchida, S. Ikegawa
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引用次数: 3

Abstract

A new test pattern, quadruplet checker board (QCKBD), is proposed which enables to evaluate magnetic crosstalk from the neighbor write lines. At first, some conventional test patterns changing the write points were applied to categorize magnetic random access memory (MRAM) write errors. But magnetic crosstalk from the neighbor write lines could not be isolated by these conventional tests since magnetic crosstalk error was caused when the neighbor cell is written. Whereas the QCKBD results from 4Kb test vehicles show that magnetic crosstalk restricts the write margin. By changing the cell structure in order to suppress magnetic crosstalk, the write margin is improved from 3.3 to 7.3
用QCKBD对MRAM写错误进行分类
提出了一种新的测试模式——四重棋盘(QCKBD),可以从相邻的写线中评估磁串扰。首先,采用改变写点的常规测试模式对磁随机存储器(MRAM)写错误进行分类。但是,由于在写入相邻单元时会产生磁串扰误差,因此这些常规测试无法隔离来自相邻写入线路的磁串扰。然而,来自4Kb测试车辆的QCKBD结果表明,磁串扰限制了写入裕量。通过改变单元结构来抑制磁串扰,写入余量从3.3提高到7.3
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