{"title":"Modeling a Wet Wafer Surface Processing Chain","authors":"Max Huber, A. Zienert, J. Schuster","doi":"10.1109/IITC/MAM57687.2023.10154873","DOIUrl":null,"url":null,"abstract":"We present a wet wafer surface processing chain model that allows process engineers to optimize their technological processes concerning total process time. As an example, we study the water layer thickness on wafers from rinsing to the conditions directly before bonding. As part of this process, we focus on simulations of the wafer temperature change in a bond chamber during evacuation. The gas temperature change is calculated using a literature-known model. With this, the wafer surface temperature and the temperature profile along the symmetry axis of the wafer are calculated using Newton’s law of cooling and the heat equation, respectively.","PeriodicalId":241835,"journal":{"name":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC/MAM57687.2023.10154873","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We present a wet wafer surface processing chain model that allows process engineers to optimize their technological processes concerning total process time. As an example, we study the water layer thickness on wafers from rinsing to the conditions directly before bonding. As part of this process, we focus on simulations of the wafer temperature change in a bond chamber during evacuation. The gas temperature change is calculated using a literature-known model. With this, the wafer surface temperature and the temperature profile along the symmetry axis of the wafer are calculated using Newton’s law of cooling and the heat equation, respectively.