Modeling a Wet Wafer Surface Processing Chain

Max Huber, A. Zienert, J. Schuster
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Abstract

We present a wet wafer surface processing chain model that allows process engineers to optimize their technological processes concerning total process time. As an example, we study the water layer thickness on wafers from rinsing to the conditions directly before bonding. As part of this process, we focus on simulations of the wafer temperature change in a bond chamber during evacuation. The gas temperature change is calculated using a literature-known model. With this, the wafer surface temperature and the temperature profile along the symmetry axis of the wafer are calculated using Newton’s law of cooling and the heat equation, respectively.
湿晶圆片表面加工链建模
我们提出了一个湿晶圆表面加工链模型,该模型允许工艺工程师根据总工艺时间优化他们的工艺过程。以硅片为例,研究了从冲洗到直接粘合前硅片表面水层厚度的变化情况。作为该过程的一部分,我们重点模拟了在抽吸过程中键合腔中的晶圆温度变化。气体温度变化是用已知的文献模型计算的。在此基础上,分别利用牛顿冷却定律和热方程计算了晶圆片表面温度和晶圆片对称轴温度分布。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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