Evaluations of leakage currents and capacitances on elementary CMOS devices

Abstract

A method allowing the easy determination of currents and capacitances of integrated structures in the femtoampere and femtofarad ranges, respectively, is developed. It involves some test structures and, as equipment, a standard transistor parameter analyzer. In the case of minimum size diodes for a 1.5- mu m CMOS technology, experimental results show the capabilities of the method, and good consistency with simulation.<>