Investigating the temperature effect of reliability on integration IC 3D packaging under drop test

Hao Chen, Yi-Che Chiang, T. Hung, K. Chiang
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引用次数: 2

Abstract

Technological developments and increasing user demand have driven the evolution of electronic packaging from traditional single-chip packaging to multi-chip packaging, i.e., three-dimensional integrated circuit (3D-IC) packaging. The main advantages of 3D-IC packaging are its small size and lower signal delay. Thus, 3D-IC packaging has been broadly used in mobile electronic devices. Mobile electronic devices are prone to being dropped because of their portability. During drop impact, the temperature inside the packages becomes higher than ambient temperature especially for 3-D packaging, which would influence physical behavior of packaging. A simulation that uses the Input-G method was adopted to analyze the dynamic behavior of electronic packaging. Finite element (FE) model analysis that considers glass transition temperature (Tg) was performed to investigate the effect of temperature. The results showed that the reliability of electronic packaging with underfill might be worse than that without underfill when temperature loading is higher than Tg. This study focuses on drop reliability and considers the effect of Tg. An FE model was established based on a real 3D-IC integration package to predict the drop life by using CoffinManson semi-empirical equation. First, thermal stress analysis would be The drop analysis conducted after the thermal stress analysis indicates that the plastic strain of solder joint increased evidently when considering the effect of temperature during drop analysis and that a temperature higher than Tg has a more obvious influence on strain accumulation during thermal stress analysis than during drop impact analysis. Finally, the drop reliability of 3D-IC was predicted. For a structure without underfill, the drop life can be predicted reasonably, whereas it will be overestimated when the structure has underfill. These different findings may be due to the perfect bonding provided by the underfill during each drop in the simulation, which is unlike actual, real-world situations.
研究温度对集成电路3D封装可靠性的影响
技术的发展和不断增长的用户需求推动了电子封装从传统的单芯片封装向多芯片封装的演变,即三维集成电路(3D-IC)封装。3D-IC封装的主要优点是体积小,信号延迟低。因此,3D-IC封装已广泛应用于移动电子设备。移动电子设备由于其便携性很容易被丢弃。在跌落冲击过程中,包装内部温度会高于环境温度,尤其是三维包装,这将影响包装的物理行为。采用输入- g法仿真分析了电子封装的动态特性。通过考虑玻璃化转变温度(Tg)的有限元模型分析,探讨了温度的影响。结果表明,当温度载荷大于Tg时,带底填料的电子封装的可靠性可能比不带底填料的电子封装的可靠性差。本文主要研究跌落可靠性,并考虑Tg的影响。以实际3D-IC集成封装为例,利用CoffinManson半经验方程建立了预测跌落寿命的有限元模型。热应力分析后进行的跌落分析表明,考虑跌落分析过程中温度的影响,焊点的塑性应变明显增大,高于Tg的温度对热应力分析过程中应变积累的影响比跌落冲击分析过程中更明显。最后,对3D-IC的跌落可靠性进行了预测。对于无下填土结构,可合理预测其跌落寿命,而有下填土结构的跌落寿命会被高估。这些不同的发现可能是由于在模拟的每次下降过程中,下填土提供了完美的结合,这与现实世界的实际情况不同。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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