Cu interconnect technologies in Fujitsu and problems in installing Cu equipment in an existing semiconductor manufacturing line

Proceedings of the IEEE 1999 International Interconnect Technology Conference (Cat. No.99EX247) Pub Date : 1999-05-26 DOI:10.1109/IITC.1999.787094

M. Yamada, H. Yagi, S. Sugatani, M. Miyajima, D. Matsunaga, T. Hosoda, H. Kudo, N. Misawa, T. Nakamura

引用次数: 2

Abstract

Summary form only given. In this paper, Cu interconnect technologies in Fujitsu targeted for the 0.18 /spl mu/m generation and beyond are introduced. Some new integration schemes for Cu wiring are also demonstrated, targeted for the 0.13 /spl mu/m generation. Finally, we discuss some important aspects of installation of Cu equipment in an existing semiconductor manufacturing line.

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富士通的铜互连技术以及在现有半导体生产线上安装铜设备的问题

只提供摘要形式。本文介绍了富士通针对0.18 /spl mu/m及以上一代的铜互连技术。针对0.13 /spl mu/m的一代，还演示了一些新的铜布线集成方案。最后，我们讨论了在现有半导体生产线上安装Cu设备的一些重要方面。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of the IEEE 1999 International Interconnect Technology Conference (Cat. No.99EX247)

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