Comparison and analysis of short circuit capability of 1200V single-chip SiC MOSFET and Si IGBT

Jiahui Sun, Hongyi Xu, Xinke Wu, Kuang Sheng
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引用次数: 43

Abstract

Short circuit capability of commercial SiC MOSFETs is analyzed, which is compared with that of commercial Si IGBTs. Junction temperatures during short circuit tests are analyzed in this work. A test bench is designed for short circuit tests of discrete MOSFETs and IGBTs. Commercially available 1200V SiC MOSFETs from Wolfspeed (C2M0080120D) and 1200V Si IGBTs from Infineon (IKW25N120H3) with similar current rating are tested. The short circuit withstand time (tcr) of the 1200V SiC MOSFET is much shorter than that of the 1200V Si IGBT. A 1-D transient finite element thermal model based on structure parameters is constructed to investigate the junction temperature curves during short circuit. According to the analysis of heat generation, short circuit capability of the SiC MOSFET is mainly restricted by high electric field at the P-N junction and high short circuit current density.
1200V单片SiC MOSFET和Si IGBT短路性能的比较与分析
分析了商用SiC mosfet的短路性能,并与商用Si igbt进行了比较。本文对短路试验中的结温进行了分析。设计了用于分立mosfet和igbt短路测试的试验台。测试了Wolfspeed公司的1200V SiC mosfet (C2M0080120D)和英飞凌公司的1200V Si igbt (IKW25N120H3)具有相似的额定电流。1200V SiC MOSFET的耐短路时间(tcr)比1200V Si IGBT短得多。建立了基于结构参数的一维瞬态有限元热模型,研究了短路时的结温曲线。根据热生成分析,SiC MOSFET的短路能力主要受P-N结高电场和高短路电流密度的限制。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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