L. Brunet, P. Batude, C. Fenouillet-Béranger, P. Besombes, L. Hortemel, F. Ponthenier, B. Previtali, C. Tabone, A. Royer, C. Agraffeil, C. Euvrard-Colnat, A. Seignard, C. Morales, F. Fournel, L. Benaissa, T. Signamarcheix, P. Besson, M. Jourdan, R. Kachtouli, V. Benevent, J. Hartmann, C. Comboroure, N. Allouti, N. Possémé, C. Vizioz, C. Arvet, S. Barnola, S. Kerdilès, L. Baud, L. Pasini, C-M. V. Lu, F. Deprat, A. Toffoli, G. Romano, C. Guedj, V. Delaye, F. Boeuf, O. Faynot, M. Vinet
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引用次数: 58
Abstract
For the first time, a full 3D CMOS over CMOS CoolCube™ integration is demonstrated with a top level compatible with state of the art high performance FDSOI (Fully-Depleted Silicon On Insulator) process requirements such as High-k/metal gate or raised source and drain. Functional 3D inverters with either PMOS or NMOS on the top level are highlighted. Furthermore, Si layer transfer above a 28nm W Metal 1 level of an industrial short loop and the return in a front end environment is presented, confirming the industrial compatibility of CoolCube™ integration.
首次展示了基于CMOS的全3D CMOS CoolCube™集成，其顶级兼容最先进的高性能FDSOI(全耗尽硅绝缘体)工艺要求，如高k/金属栅极或提高源极和漏极。功能3D逆变器与PMOS或NMOS在顶层突出显示。此外，介绍了工业短回路28nm W Metal 1级以上的Si层转移和前端环境中的返回，确认了CoolCube™集成的工业兼容性。
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