2D measurement using CD SEM for arbitrarily shaped patterns

Hyung-Joo Lee, So-Yoon Bae, Dong-Hoon Chung, S. Woo, Hanku Cho, J. Matsumoto, Takayuki Nakamura, Dong Il Shin, Taejun Kim
{"title":"2D measurement using CD SEM for arbitrarily shaped patterns","authors":"Hyung-Joo Lee, So-Yoon Bae, Dong-Hoon Chung, S. Woo, Hanku Cho, J. Matsumoto, Takayuki Nakamura, Dong Il Shin, Taejun Kim","doi":"10.1117/12.746453","DOIUrl":null,"url":null,"abstract":"As the design rule of lithography becomes smaller, accuracy and precision in Critical Dimension (CD) and controllability of pattern-shape are required in semiconductor production. Critical Dimension Scanning Electron Microscope (CD SEM) is an essential tool to confirm the quality of the mask such as CD control, CD uniformity and CD mean to target (MTT). Unfortunately, in the case of extremely rounded region of arbitrary enclosed patterns, CD fluctuation depending on Region of Interest (ROI) is very serious problem in Mask CD control, so that it decreases the yield. In order to overcome this situation, we have been developing 2-dimensonal (2D) method with system makers and comparing CD performance between mask and wafer using enclosed arbitrary patterns. In this paper, we summarized the results of our evaluation that compare error budget between 1-dimensonal (1D) and 2D data using CD SEM and other optical metrology systems.","PeriodicalId":308777,"journal":{"name":"SPIE Photomask Technology","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"SPIE Photomask Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.746453","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

As the design rule of lithography becomes smaller, accuracy and precision in Critical Dimension (CD) and controllability of pattern-shape are required in semiconductor production. Critical Dimension Scanning Electron Microscope (CD SEM) is an essential tool to confirm the quality of the mask such as CD control, CD uniformity and CD mean to target (MTT). Unfortunately, in the case of extremely rounded region of arbitrary enclosed patterns, CD fluctuation depending on Region of Interest (ROI) is very serious problem in Mask CD control, so that it decreases the yield. In order to overcome this situation, we have been developing 2-dimensonal (2D) method with system makers and comparing CD performance between mask and wafer using enclosed arbitrary patterns. In this paper, we summarized the results of our evaluation that compare error budget between 1-dimensonal (1D) and 2D data using CD SEM and other optical metrology systems.
二维测量使用CD扫描电镜任意形状的图案
随着光刻设计规则的不断缩小,半导体生产对关键尺寸的精度和精度以及图形形状的可控性提出了更高的要求。关键尺寸扫描电子显微镜(CD SEM)是确定掩模质量的重要工具,如CD控制、CD均匀性和CD平均靶量(MTT)。然而,在任意封闭图案的极圆区域中,由于感兴趣区域(ROI)的波动是掩模CD控制中非常严重的问题,从而降低了产量。为了克服这种情况,我们一直在与系统制造商一起开发二维(2D)方法,并使用封闭的任意图案比较掩模和晶圆之间的CD性能。在本文中,我们总结了我们的评估结果,比较了使用CD扫描电镜和其他光学计量系统的一维(1D)和二维数据之间的误差预算。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信