The rules of the Rue Morgue: a decade later

G. Mura, M. Vanzi, G. Cassanelli, F. Fantini
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引用次数: 7

Abstract

The paper could limit itself to repeat the complaint that originated the first "Rules of the Rue Morgue", maybe updating the scenario of the many end users currently exposed to the risk of failed failure analyses. Nevertheless, some constructive proposals will be also pointed out, as those exposed by a recent paper (Cassanelli et al., 2005) that, dealing with the challenges in system reliability predictions, proposed some shortcuts to include even few field data into that process, and to include F.A. findings, when reliable, to skip cumbersome (and often not available) extraction of reliability parameters by statistical data. More specifically, in both the reported B and C cases the sudden occurrence of the failure mode was not related to any sudden firing of the root failure mechanisms, but other hidden roots have been identified, with completely different corrective actions with respect to the first interpretations. There is a simple and "correct" conclusion to this result: by means of thorough analyses, the first specimen (IGBT) was indicted for some higher sensitivity to latch-up, and the second (CMOS) to external EMI-induced ESD events. This could move to correct the corresponding pi factors employed for calculating the actual failure rate lambda drawing a physically sound shortcut to the estimation of the reliability parameters for some critical devices of a given electronic system
莫尔格街的规矩:十年后
这篇论文可以局限于重复最初的“莫格街规则”的抱怨,也许可以更新目前面临失败失败分析风险的许多最终用户的场景。然而,一些建设性的建议也将被指出,正如最近的一篇论文(Cassanelli et al., 2005)所揭示的那样,该论文在处理系统可靠性预测中的挑战时,提出了一些捷径,在该过程中包括很少的现场数据,并在可靠的情况下包括F.A.发现,跳过繁琐的(通常不可用的)通过统计数据提取可靠性参数。更具体地说,在报告的B和C案例中,故障模式的突然发生与任何突然触发的根源故障机制无关,但已经确定了其他隐藏的根源,并采取了与第一种解释完全不同的纠正措施。这个结果有一个简单而“正确”的结论:通过彻底的分析,第一个样品(IGBT)被指控对锁存有更高的灵敏度,第二个(CMOS)对外部emi诱导的ESD事件有更高的灵敏度。这可以纠正用于计算实际故障率λ的相应pi因子,从而为估计给定电子系统中某些关键设备的可靠性参数提供物理上合理的捷径
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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