Ultra low CTE (0 PPM/C) polyimide film and its potential application

Y. Tsukada
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引用次数: 1

Abstract

A CTE gap between a silicon chip and a package substrate is one of the most critical issues in securing reliability for a high-density packaging. We succeeded in a development of a new thermally stable and ultra low CTE polyimide film . The CTE is lower than that of silicon in a wide temperature range. A thick laminate sheet, with the thickness of 250 to 500 micrometers, composed with this ultra low CTE polyimide films shows low CTE as well. Since the sheet can be easily processed by machine cutting or laser drilling with a high aspect ratio, it is highly expected to perform as a core material for a thermally- reliable package substrate. Along with the role of core material, this polyimide film is able to be applied as a dielectric material for wiring layers as well. This paper describes possible applications of this film in a package substrate with early test data of thermal cycle stress.
超低CTE (0 PPM/C)聚酰亚胺薄膜及其潜在应用
硅芯片和封装基板之间的CTE间隙是确保高密度封装可靠性的最关键问题之一。我们成功地开发了一种新的热稳定的超低CTE聚酰亚胺薄膜。在较宽的温度范围内,CTE低于硅。由这种超低CTE聚酰亚胺薄膜组成的厚层压板,厚度为250至500微米,也显示出低CTE。由于该薄片可以很容易地通过机器切割或激光钻孔加工,具有高宽高比,因此它被高度期望作为热可靠的封装基板的核心材料。除了作为芯材的作用外,该聚酰亚胺薄膜还可以作为布线层的介电材料。本文结合早期热循环应力测试数据,阐述了该薄膜在封装基板中的应用前景。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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