Improvement of the performances of SOI CMOS operational amplifiers by means of a gain-boosting stage

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI:10.1109/SOI.1993.344545

B. Gentinne, J. Colinge, P. Jespers, J. Eggermont

引用次数: 4

Abstract

Both measurements and simulations have shown that the use of a gain-boosting architecture increases significantly the gain of the amplifier. Up to now, we have obtained very encouraging measurement results: a DC gain of 90 dB and a transition frequency of 30 MHz on a 16 pF load. The next prototypes under fabrication should give full satisfaction and correspond to the initial specifications: a DC gain of 120 dB and a transition frequency of 60 MHz on a 16 pF load.<>

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利用增益提升级提高SOI CMOS运算放大器的性能

测量和仿真都表明，增益增强结构的使用显著提高了放大器的增益。到目前为止，我们已经获得了非常令人鼓舞的测量结果:在16 pF负载下，直流增益为90 dB，过渡频率为30 MHz。下一个正在制造的原型应该完全满足并符合初始规格:在16pf负载下，直流增益为120 dB，过渡频率为60 MHz

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of 1993 IEEE International SOI Conference

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