Leakage Current Characteristic of Pre-Damaged Interlayer Dielectric During Voltage Ramp Method

Abstract

In order to investigate the effects of Cu ions migration under BTS, VRDB tests were conducted on the pre-damaged samples. From the various VRDB tests on intrinsic and extrinsic system, migrated Cu ion from electrode plays a role of PF trap site. Since the migration of Cu ions is faster than the formation of intrinsic defects, TTF is set by the migration of Cu ions in extrinsic system.