Optimization of Bosch etch process for through wafer interconnects

Abstract

The Bosch etch process was utilized to create 50 micrometer vias with an aspect ration of 10:1 in silicon wafers for through wafer interconnects. The process is complex with twenty-two separate parameters required to control the process. Deviating from the standard process and flowing SF/sub 6/ during the deposition process resulted in a more stable and reproducible process.